Semiconductor device and method of manufacturing the same

ABSTRACT

In one embodiment, a semiconductor device includes a substrate, and a first shield member provided on or in the substrate. The device further includes a semiconductor chip provided on the first shield member, and a first wire electrically connected to the semiconductor chip and the substrate. The device further includes a second wire electrically or magnetically connected to the first shield member, and a second shield member provided above the semiconductor chip, electrically insulated from the first wire, and electrically or magnetically connected to the second wire.

CROSS REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromthe prior U.S. Provisional Patent Application No. 62/395,359 filed onSep. 15, 2016, the entire contents of which are incorporated herein byreference.

FIELD

Embodiments described herein relate to a semiconductor device and amethod of manufacturing the same.

BACKGROUND

A semiconductor chip that may be influenced by a magnetic field need beprotected from magnetic noise incoming from the outside of thesemiconductor chip. Accordingly, a magnetic material having highmagnetic permeability is generally arranged near the semiconductor chipso as to let the magnetic field escape through the magnetic material.For example, it is possible to let the magnetic field escape by coveringthe surrounding of the semiconductor chip with a box-shaped magneticmember. However, in order to cover the surrounding of the semiconductorchip with the box-shaped magnetic member, it is necessary to sandwichthe semiconductor chip between a holding plate made of a magneticmaterial and a lid plate made of a magnetic material and to bond theholding plate and the lid plate to each other by using an adhesive agentcontaining a magnetic material. As a result, there are problems that themagnetic permeability of the magnetic member is lowered by the adhesiveagent and a step for applying the adhesive agent is required.

Furthermore, when a semiconductor chip generates an electromagnetic waveor may be influenced by an electromagnetic wave, it is necessary toprevent electromagnetic noise from being released from the semiconductorchip to the outside and to prevent electromagnetic noise from enteringthe semiconductor chip from the outside. For example, the surface of asemiconductor package is generally coated with a shield layer havinghigh electrical conductivity and the shield layer is connected to aground layer provided in a substrate so that the electromagnetic wave isreflected on the shield layer and escapes into the ground layer. This iscalled shield packaging. However, when the semiconductor package iscoated by the shield layer, there are problems that the semiconductormanufacturing apparatus may be contaminated, the shielding effect may belowered when the shield layer comes off, and it is difficult to engravea laser mark on the shield layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 5B are cross-sectional views and top views illustrating amethod of manufacturing a semiconductor device of a first embodiment;

FIG. 6 is a cross-sectional view illustrating a structure of asemiconductor device of a comparative example of the first embodiment;

FIGS. 7A to 10B are cross-sectional views and top views illustrating amethod of manufacturing a semiconductor device of a second embodiment;

FIG. 11 is a cross-sectional view illustrating a structure of asemiconductor device of a comparative example of the second embodiment;

FIGS. 12A to 16B are cross-sectional views and top views illustrating amethod of manufacturing a semiconductor device of a third embodiment;

FIGS. 17A to 21B are cross-sectional views and top views illustrating amethod of manufacturing a semiconductor device of a fourth embodiment;

FIGS. 22A and 22B are a cross-sectional view and a top view illustratinga structure of a semiconductor device of a fifth embodiment; and

FIGS. 23A and 23B are a cross-sectional view and a top view illustratinga structure of a semiconductor device of a sixth embodiment.

DETAILED DESCRIPTION

Embodiments will now be explained with reference to the accompanyingdrawings. In FIGS. 1A to 23B, the same or similar configurations aredenoted by the same reference numerals and the duplicated descriptionthereof will be omitted.

In one embodiment, a semiconductor device includes a substrate, and afirst shield member provided on or in the substrate. The device furtherincludes a semiconductor chip provided on the first shield member, and afirst wire electrically connected to the semiconductor chip and thesubstrate. The device further includes a second wire electrically ormagnetically connected to the first shield member, and a second shieldmember provided above the semiconductor chip, electrically insulatedfrom the first wire, and electrically or magnetically connected to thesecond wire.

First Embodiment

FIGS. 1A to 5B are cross-sectional views and top views illustrating amethod of manufacturing a semiconductor device of a first embodiment.For example, the method of the present embodiment is applied to a casewhere a semiconductor chip need be protected from magnetic noise causedby a static magnetic field.

FIG. 1A is a cross-sectional view illustrating the method ofmanufacturing the semiconductor device of the present embodiment, andFIG. 1B is a top view corresponding to FIG. 1A. FIGS. 1A and 1Billustrate an X-direction and a Y-direction that are parallel to thesurface of a substrate 1 and are perpendicular to each other, and aZ-direction that is perpendicular to the surface of the substrate 1. Inthe present specification, the +Z direction is assumed to be the upwarddirection whereas the −Z direction is assumed to be the downwarddirection. However, the −Z direction may or may not coincide with thedirection of the gravity. The explanation above also applies to FIGS. 2Ato 5B and other drawings explained below.

First, shield lower plates 3 are mounted on the substrate 1 via dieattachment (DA) materials 2 (FIGS. 1A and 1B). The shield lower plates 3are formed, for example, of a magnetic material having high magneticpermeability such as iron or permalloy (an iron-nickel alloy). Theshield lower plates 3 are an example of a first shield member.

FIG. 1A illustrates a shield lower plate 3 on which a semiconductor chipis to be mounted. FIG. 1B illustrates four shield lower plates 3 onwhich four semiconductor chips are to be mounted. FIG. 1A is across-sectional view of any one of the four shield lower plates 3illustrated in FIG. 1B. In the following description, manufacturingsteps performed on each shield lower plate 3 will be explained.

Next, the semiconductor chips 4 are mounted on the shield lower plates 3via the DA materials 2, and the substrate 1 is electrically connected tothe semiconductor chips 4 by bonding wires 5 (FIGS. 2A and 2B). Thebonding wires 5 are wires for signals or power supplies, andelectrically connect the pads on the surface of the substrate 1 and thepads on the surface of the semiconductor chips 4. The bonding wires 5are an example of a first wire.

Each semiconductor chip 4 illustrated in FIG. 2B has a first lateralface S₁, a second lateral face S₂ positioned opposite the first lateralface S₁, a third lateral face S₃ positioned between the first lateralface S₁ and the second lateral face S₂, and a fourth lateral face S₄positioned opposite the third lateral face S₃. The first lateral faceS₁, the second lateral face S₂, the third lateral face S₃ and the fourthlateral face S₄ of the present embodiment face the +Y direction, the −Ydirection, the +X direction and the −X direction, respectively. Thebonding wires 5 are electrically connected to the substrate 1 and to thesemiconductor chips 4 in the vicinity of the first and the secondlateral faces S₁ and S₂.

Next, two ends of each shielding wire 6 are magnetically connected to ashield lower plate 3 (FIGS. 3A and 3B). More specifically, eachshielding wire 6 is extended across a semiconductor chip 4 so as to bepositioned above the semiconductor chip 4. One end of each shieldingwire 6 is magnetically connected to a shield lower plate 3 in thevicinity of the third lateral face S₃, and the other end of eachshielding wire 6 is magnetically connected to the shield lower plate 3in the vicinity of the fourth lateral face S₄. The shielding wires 6 arean example of a second wire.

As explained above, each bonding wire 5 of the present embodiment iselectrically connected to the substrate 1 and a semiconductor chip 4 onthe side of the first or second lateral face S₁ or S₂, and eachshielding wire 6 of the present embodiment is magnetically connected toa shield lower plate 3 on the side of the third or fourth lateral faceS₃ or S₄.

The shielding wires 6 are formed, for example, of a magnetic materialhaving high magnetic permeability such as iron or permalloy. Eachshielding wire 6 of the present embodiment is a ribbon wire having abelt-like shape. Furthermore, the shielding wires 6 of the presentembodiment are magnetically connected to the shield lower plates 3through a pressure bonding process without using any adhesive agent. Anexample of the pressure bonding process is an ultrasonic pressurebonding process. Because bending the shielding wires 6 makes it easierto perform the pressure bonding process thereon, it is desirable toconfigure the shielding wires 6 with a material that is easily bent.

As illustrated in FIG. 3A, the height of the highest portion of eachshielding wire 6 of the present embodiment is arranged to be higher thanthe height of the highest portion of each bonding wire 5. Thisarrangement is adopted to bring shield upper plates 8 (explained later)into contact with the shielding wires 6 and to keep the shield upperplates 8 out of contact with the bonding wires 5. Furthermore, theshielding wires 6 of the present embodiment are positioned so as to beout of contact with the bonding wires 5 and are electrically andmagnetically insulated from the bonding wires 5.

Next, the shield upper plates 8 are mounted above the semiconductorchips 4 via embedding DA materials 7 (FIGS. 4A and 4B). Furthermore, theshield upper plates 8 are magnetically connected to the shielding wires6 (FIGS. 5A and 5B). More specifically, the shield upper plates 8 aremagnetically connected to the shielding wires 6 by being brought intocontact with the shielding wires 6. Also, the shield upper plates 8 areelectrically and magnetically insulated from the bonding wires 5 bybeing kept out of contact with the bonding wires 5. Each embedding DAmaterial 7 is a film called “film on wire (FOW)”, for example. Theshield upper plates 8 are formed, for example, of a magnetic materialhaving high magnetic permeability such as iron or permalloy. The shieldupper plates 8 are an example of a second shield member.

In the present embodiment, the shield lower plates 3 are magneticallyconnected to the shield upper plates 8 by the shielding wires 6.Accordingly, each set of a shield lower plate 3, a shielding wire 6 anda shield upper plate 8 can effectively protect a semiconductor chip 4from magnetic noise by functioning as a single magnetic material. It isdesirable to form the shield lower plates 3, the shielding wires 6 andthe shield upper plates 8 by using one or more types of magneticmaterials having the same or similar levels of magnetic permeability.With this arrangement, it is possible to prevent an N pole and an S polegenerating a large magnetic field from being generated in the magneticmaterial made of a shield lower plate 3, a shielding wire 6 and a shieldupper plate 8.

As illustrated in FIG. 4A, the shield upper plates 8 are mounted abovethe semiconductor chips 4 via the embedding DA materials 7 pasted on thelower faces of the shield upper plates 8. With this arrangement, asillustrated in FIG. 5A, portions of the bonding wires 5 and theshielding wires 6 are embedded by the embedding DA materials 7, and thepositions of the shield upper plates 8 are fixed with respect to theshielding wires 6. After that, the semiconductor chips 4 and the likeare sealed by sealing resin 9 in the present embodiment (FIGS. 5A and5B).

FIG. 6 is a cross-sectional view illustrating a structure of asemiconductor device of a comparative example of the first embodiment.

The shield lower plate 3 and the shield upper plate 8 in thiscomparative example serve as a holding plate and a lid plate,respectively. The shield lower plate 3 and the shield upper plate 8 areadhered to each other by an adhesive agent 10 containing a magneticmaterial 10 a having high magnetic permeability. In this situation,because the adhesive agent 10 contains resin besides the magneticmaterial 10 a, the magnetic permeability of the adhesive agent 10 islower than the magnetic permeability of the magnetic material 10 aitself. As a result, the shielding effect of the shield lower plate 3and the shield upper plate 8 against magnetic noise is lowered. Incontrast, the present embodiment makes it possible to solve this problemby avoiding the use of the adhesive agent 10.

As explained above, the shield lower plates 3 and the shield upperplates 8 of the present embodiment are magnetically connected by thecorresponding shielding wires 6. Consequently, the present embodimentmakes it possible to realize a shield structure by using the shieldlower plates 3, the shielding wires 6 and the shield upper plates 8, andto protect the semiconductor chips 4 from magnetic noise by using theshield structure having a high shielding effect. Also, the presentembodiment makes it possible, by avoiding the use of the adhesive agent10 is avoided, to avoid the material cost of the adhesive agent 10 andburdens from the adhering step, which can shorten “turn around time(TAT)” in the manufacture of the semiconductor device.

Second Embodiment

FIGS. 7A to 10B are cross-sectional views and top views illustrating amethod of manufacturing a semiconductor device of a second embodiment.For example, the method of the present embodiment is applied to a casewhere a semiconductor chip generates an electromagnetic wave or may beinfluenced by an electromagnetic wave.

First, the substrate 1 illustrated in FIGS. 7A and 7B is prepared. Thesubstrate 1 includes a ground layer 1 a for shielding, pads 1 b forshielding and other pads 1 c. The ground layer 1 a is formed in thesubstrate 1. The pads 1 b are electrically connected to the ground layer1 a and are exposed to the surface of the substrate 1. The pads 1 c areelectrically insulated from the ground layer 1 a and are exposed to thesurface of the substrate 1. For the sake of convenience in illustration,only FIG. 7B illustrates the pads 1 c and FIG. 7A does not illustratethe pads 1 c. The ground layer 1 a and the pads 1 b and 1 c are formed,for example, of a conductive material having high electricalconductivity such as copper or 42 alloy (an iron-nickel alloy). Theground layer 1 a and the former pads 1 b are an example of a firstshield member.

Next, the semiconductor chips 4 are mounted on the substrate 1 via theDA materials 2, and the substrate 1 is electrically connected to thesemiconductor chips 4 by the bonding wires 5 and shielding wires 11(FIGS. 8A and 8B). The bonding wires 5 are wires for signals and powersupplies, and are electrically connected to the pads 1 c on the surfaceof the substrate 1 and the pads on the surface of the semiconductorchips 4. Each shielding wire 11 has a linear shape similarly to thebonding wires 5, and is electrically connected to a pad 1 b on thesurface of the substrate 1 and a pad on the surface of a semiconductorchip 4. The shielding wires 11 are formed, for example, of a conductivematerial having high electrical conductivity such as copper or 42 alloy.The bonding wires 5 are an example of a first wire, and the shieldingwires 11 are an example of a second wire.

Each semiconductor chip 4 illustrated in FIG. 8B has the first lateralface S₁, the second lateral face S₂ positioned opposite the firstlateral face S₁, the third lateral face S₃ positioned between the firstlateral face S₁ and the second lateral face S₂, and the fourth lateralface S₄ positioned opposite the third lateral face S₃. The bonding wires5 are electrically connected to the substrate 1 and to the semiconductorchips 4 in the vicinity of the first and the second lateral faces S₁ andS₂. Similarly, the shielding wires 11 are electrically connected to thesubstrate 1 and to the semiconductor chips 4 in the vicinity of thefirst and the second lateral faces S₁ and S₂. As explained herein, eachof the bonding wires 5 and the shielding wires 11 of the presentembodiment is electrically connected to the substrate 1 and asemiconductor chip 4 on the side of the first or second lateral face S₁or S₂.

As illustrated in FIG. 8A, the height of the highest portion of eachshielding wire 11 of the present embodiment is arranged to be higherthan the height of the highest portion of each bonding wire 5. Thisarrangement is adopted to bring the shield upper plates 8 into contactwith the shielding wires 11 and to keep the shield upper plates 8 out ofcontact with the bonding wires 5. Furthermore, the shielding wires 11 ofthe present embodiment are positioned so as to be out of contact withthe bonding wires 5, and are electrically insulated from the bondingwires 5.

Next, the shield upper plates 8 are mounted above the semiconductorchips 4 via the embedding DA materials 7 (FIGS. 9A and 9B). Furthermore,the shield upper plates 8 are electrically connected to the shieldingwires 11 (FIGS. 10A and 10B). More specifically, the shield upper plates8 are electrically connected to the shielding wires 11 by being broughtinto contact with the shielding wires 11. Also, the shield upper plates8 are electrically insulated from the bonding wires 5 by being kept outof contact with the bonding wires 5. The shield upper plates 8 areformed, for example, of a conductive material having high electricalconductivity such as copper or 42 alloy. The shield upper plates 8 arean example of a second shield member.

In the present embodiment, the ground layer 1 a is electricallyconnected to the shield upper plates 8 by the shielding wires 11.Accordingly, the ground layer 1 a, the shielding wires 11 and the shieldupper plate 8 can effectively protect the semiconductor chips 4 fromelectromagnetic noise by functioning as a single conductive material.

As illustrated in FIG. 9A, the shield upper plates 8 are mounted abovethe semiconductor chips 4 via the embedding DA materials 7 pasted on thelower faces of the shield upper plates 8. With this arrangement, asillustrated in FIG. 10A, portions of the bonding wires 5 and theshielding wires 11 are embedded by the embedding DA materials 7, and thepositions of the shield upper plates 8 are fixed with respect to theshielding wires 11. After that, the semiconductor chips 4 and the likeare sealed by the sealing resin 9 in the present embodiment (FIGS. 10Aand 10B).

FIG. 11 is a cross-sectional view illustrating a structure of asemiconductor device of a comparative example of the second embodiment.

The semiconductor device in this comparative example includes a shieldlayer (plated layer) 12 that coats the sealing resin 9, in place of theshielding wires 11 and the shield upper plates 8. The shield layer 12 iselectrically connected to the ground layer 1 a. In this situation, thereare problems that the semiconductor manufacturing apparatus iscontaminated, the shielding effect is lowered when the shield layer 12comes off, and it is difficult to engrave a laser mark on the shieldlayer 12. In contrast, the present embodiment makes it possible to solvethese problems by avoiding the use of the shield layer 12.

As explained above, the ground layer 1 a and the shield upper plates 8in the present embodiment are electrically connected by the shieldingwires 11. Consequently, the present embodiment makes it possible torealize a shield structure by using the ground layer 1 a, the shieldingwires 11 and the shield upper plates 8, and to prevent electromagneticnoise from being released from the semiconductor chips 4 to the outsideand to prevent electromagnetic noise from entering the semiconductorchips 4 from the outside by using the shield structure having a highshielding effect.

Although the shielding wires 11 of the present embodiment have thelinear shapes, the shielding wires 11 may have belt-like shapessimilarly to the shielding wires 6 of the first embodiment. Conversely,although the shielding wires 6 of the first embodiment have thebelt-like shapes, the shielding wires 6 may have linear shapes similarlyto the shielding wires 11 of the present embodiment. When a wire havinga belt-like shape is connected to a pad, it is possible to connect thewire to the pad through a pressure bonding process, for example. Incontrast, when a wire having a linear shape is connected to a pad, it ispossible to connect the wire to the pad by implementing a commonly-usedwire bonding method, for example.

Third Embodiment

FIGS. 12A to 16B are cross-sectional views and top views illustrating amethod of manufacturing a semiconductor device of a third embodiment.For example, the method of the present embodiment is applied to a casewhere a semiconductor chip need be protected from magnetic noise causedby a static magnetic field.

First, a lower shield sheet 21 is mounted on a substrate 1 via a DAmaterial 2 (FIGS. 12A and 12B). The lower shield sheet 21 is, forexample, a resin film containing a magnetic material (metallic material)having high magnetic permeability such as iron or permalloy. The lowershield sheet 21 is an example of a first shield member.

Next, a semiconductor chip 4 is mounted on the lower shield sheet 21 viathe DA material 2. The substrate 1 is electrically connected to thesemiconductor chip 4 by bonding wires 5 (FIGS. 13A and 13B). The bondingwires 5 are an example of the first wire.

Next, an upper shield sheet 22 is mounted above the semiconductor chip 4via an embedding DA material 7 (FIGS. 14A and 14B). More specifically,the upper shield sheet 22 is electrically and magnetically insulatedfrom the bonding wires 5 as a result of the upper shield sheet 22 beingkept out of contact with the bonding wires 5. The upper shield sheet 22is, for example, a resin film containing a magnetic material (metallicmaterial) having high magnetic permeability such as iron or permalloy.The upper shield sheet 22 is an example of a second shield member.

The upper shield sheet 22 is mounted above the semiconductor chip 4 viathe embedding DA material 7 pasted on the lower face of the upper shieldsheet 22. With this arrangement, as illustrated in FIG. 14A, portions ofthe bonding wires 5 are embedded by the embedding DA materials 7, andthe position of the upper shield sheet 22 is fixed.

Next, the lower shield sheet 21 is magnetically connected to the uppershield sheet 22 by two connection shield sheets 23 (FIGS. 15A and 15B).These connection shield sheets 23 are disposed so as to sandwich thesemiconductor chip 4 and the upper shield sheet 22. More specifically,the bonding wires 5 are electrically connected to the substrate 1 andthe semiconductor chip 4 in the vicinity of the first and the secondlateral faces S₁ and S₂. In contrast, the connection shield sheets 23are magnetically connected to the lower shield sheet 21 and to the uppershield sheet 22 in the vicinity of the third and the fourth lateralfaces S₃ and S₄ (see FIG. 3B and the like for the first to the fourthlateral faces S₁ to S₄). The connection shield sheets 23 are an exampleof a connecting member.

As explained above, each bonding wire 5 of the present embodiment iselectrically connected to the substrate 1 and the semiconductor chip 4on the side of the first or second lateral face S₁ or S₂. Eachconnection shield sheet 23 of the present embodiment is magneticallyconnected to the lower shield sheet 21 and the upper shield sheet 22 onthe side of the third or fourth lateral face S₃ or S₄.

Each connection shield sheet 23 is, for example, a resin film containinga magnetic material (metallic material) having high magneticpermeability such as iron or permalloy and has a sheet-like shape. Theconnection shield sheets 23 of the present embodiment are magneticallyconnected to the lower shield sheet 21 and to the upper shield sheet 22through a pressure bonding process without using any adhesive agent. Anexample of the pressure bonding process is a thermal compression bondingprocess. The reference numeral “24” indicates connection portionsbetween the lower shield sheet 21 and the connection shield sheets 23subject to the pressure bonding process, and connection portions betweenthe upper shield sheet 22 and the connection shield sheets 23 subject tothe pressure bonding process. Because the connection shield sheets 23are easily bent, it is possible to easily perform the pressure bondingstep with the bending even when there is a height difference between theconnection portions 24 of the lower shield sheet 21 and the connectionportions 24 of the upper shield sheet 22 as in the present embodiment.

The lower shield sheet 21, the upper shield sheet 22 and the connectionshield sheets 23 of the present embodiment are formed of resin that isin a semi-hardened state prior to the connecting process. By hardeningthe resin of the shield sheets 21 to 23 at the time of the connectingprocess, it is possible to firmly connect the shield sheets 21 to 23together.

The lower shield sheet 21 and the upper shield sheet 22 in the presentembodiment is magnetically connected by the connection shield sheets 23.Accordingly, the lower shield sheet 21, the upper shield sheet 22 andthe connection shield sheets 23 can effectively protect thesemiconductor chip 4 from magnetic noise by functioning as a singlemagnetic material. It is desirable to form the lower shield sheet 21,the upper shield sheet 22 and the connection shield sheets 23 by usingone or more types of magnetic materials having the same or similarlevels of magnetic permeability. With this arrangement, it is possibleto prevent an N pole and an S pole generating a large magnetic fieldfrom being generated in the magnetic material made of the lower shieldsheet 21, the upper shield sheet 22 and the connection shield sheets 23.

After that, the semiconductor chip 4 and the like are sealed by thesealing resin 9 in the present embodiment (FIGS. 16A and 16B).

As explained above, the lower shield sheet 21 and the upper shield sheet22 in the present embodiment are magnetically connected by theconnection shield sheets 23. Consequently, the present embodiment makesit possible to realize a shield structure by using the lower shieldsheet 21, the upper shield sheet 22 and the connection shield sheets 23,which can protect the semiconductor chip 4 from magnetic noise by usingthe shield structure having a high shielding effect. Also, the presentembodiment makes it possible, by avoiding the use of the adhesive agent10, to avoid the material cost of the adhesive agent 10 and burdens fromthe adhering step, which can shorten the TAT in the manufacture of thesemiconductor device.

Furthermore, the size (the area) of the lower shield sheet 21 and thesize (the area) of the upper shield sheet 22 are arranged to be largerthan the area of the top face of the semiconductor chip 4 in the presentembodiment (see FIGS. 13B and 15B). Consequently, the present embodimentmakes it possible to avoid the situation where an edge of the lowershield sheet 21 or an edge of the upper shield sheet 22 comes intocontact with the semiconductor chip 4. However, it is also acceptable toarrange the size of the upper shield sheet 22 to be smaller than thearea of the top face of the semiconductor chip 4.

Furthermore, the length of the lower shield sheet 21 in the X-directionand the length of the upper shield sheet 22 in the X-direction arearranged to be longer than the length of the semiconductor chip 4 in theX-direction in the present embodiment (see FIGS. 13B and 15B).Consequently, the present embodiment makes it possible to avoid thesituation where the connection shield sheets 23 connected to the lowershield sheet 21 and to the upper shield sheet 22 come into contact withthe bonding wires 5.

Fourth Embodiment

FIGS. 17A to 21B are cross-sectional views and top views illustrating amethod of manufacturing a semiconductor device of a fourth embodiment.For example, the method of the present embodiment is applied to a casewhere a semiconductor chip generates an electromagnetic wave or may beinfluenced by an electromagnetic wave.

First, the lower shield sheet 21 is mounted on the substrate 1 via a DAmaterial 2 (FIGS. 17A and 17B). It is noted that the lower shield sheet21 has openings 31 for a wire bonding explained later. The lower shieldsheet 21 is, for example, a resin film containing a conductive material(metallic material) having high electrical conductivity such as copperor 42 alloy. The lower shield sheet 21 is an example of a first shieldmember.

Next, the semiconductor chip 4 is mounted on the lower shield sheet 21via a DA material 2. The substrate 1 is electrically connected to thesemiconductor chip 4 via the bonding wires 5 (FIGS. 18A and 18B). Inthis situation, the bonding wires 5 are connected to the surface of thesubstrate 1 exposed in the openings 31. The bonding wires 5 are anexample of the first wire.

Next, the upper shield sheet 22 is mounted above the semiconductor chip4 via the embedding DA material 7 (FIGS. 19A and 19B). Morespecifically, the upper shield sheet 22 is electrically insulated fromthe bonding wires 5 as a result of the upper shield sheet 22 being keptout of contact with the bonding wires 5. The upper shield sheet 22 is,for example, a resin film containing a conductive material (metallicmaterial) having high electrical conductivity such as copper or 42alloy. The upper shield sheet 22 is an example of a second shieldmember.

Next, the lower shield sheet 21 is electrically connected to the uppershield sheet 22 by four connection shield sheets 23 (FIGS. 20A and 20B).These connection shield sheets 23 are disposed so that two of theconnection shield sheets 23 sandwich the semiconductor chip 4 and theupper shield sheet 22 from the ±X directions and so that the other twoconnection shield sheets 23 sandwich the semiconductor chip 4 and theupper shield sheet 22 from the ±Y directions. More specifically, thebonding wires 5 are electrically connected to the substrate 1 and to thesemiconductor chip 4 in the vicinity of the third and the fourth lateralfaces S₃ and S₄. In contrast, the connection shield sheets 23 areelectrically connected to the lower shield sheet 21 and to the uppershield sheet 22 in the vicinity of the first to the fourth lateral facesS₁ to S₄ (see FIG. 8B and the like for the first to the fourth lateralfaces S₁ to S₄). The connection shield sheets 23 are an example of theconnecting member.

As explained above, each bonding wire 5 of the present embodiment iselectrically connected to the substrate 1 and the semiconductor chip 4on the side of the third or fourth lateral face S₃ or S₄. Eachconnection shield sheet 23 of the present embodiment is electricallyconnected to the lower shield sheet 21 and to the upper shield sheet 22on the side of one of the first to fourth lateral faces S₁ to S₄.

Each connection shield sheet 23 is, for example, a resin film containinga conductive material (metallic material) having high electricalconductivity such as copper or 42 alloy, and has a sheet-like shape.Similarly to those in the third embodiment, the connection shield sheets23 of the present embodiment are electrically connected to the lowershield sheet 21 and to the upper shield sheet 22 through a pressurebonding process without using any adhesive agent. The reference numeral“24” indicates connection portions between the lower shield sheet 21 andthe connection shield sheets 23 subject to the pressure bonding process,and connection portions between the upper shield sheet 22 and theconnection shield sheets 23 subject to the pressure bonding process.

After that, the semiconductor chip 4 and the like are sealed by thesealing resin 9 in the present embodiment (FIGS. 21A and 21B).

As explained above, the lower shield sheet 21 and the upper shield sheet22 in the present embodiment are electrically connected by theconnection shield sheets 23. Consequently, the present embodiment makesit possible to realize a shield structure by using the lower shieldsheet 21, the upper shield sheet 22 and the connection shield sheets 23,which can prevent electromagnetic noise from being released from thesemiconductor chip 4 to the outside and prevent electromagnetic noisefrom entering the semiconductor chip 4 from the outside by using theshield structure having a high shielding effect.

Furthermore, the present embodiment makes it possible, by avoiding theuse of the shield layer 12 described above, to avoid the situations thatthe semiconductor manufacturing apparatus is contaminated, the shieldingeffect is lowered when the shield layer 12 comes off, and it isdifficult to engrave a laser mark on the shield layer 12. According tothe present embodiment, it is possible to form the shield structure onthe inside of a semiconductor package.

Furthermore, in the present embodiment, the bottom and top faces of thesemiconductor chip 4 are shielded by the lower shield sheet 21 and theupper shield sheet 22, and the four lateral faces S₁ to S₄ of thesemiconductor chip 4 are shielded by the four connection shield sheets23. Consequently, the present embodiment makes it possible to shield allthe six faces of the semiconductor chip 4 with the shield structure, andto realize a shield structure having an even higher shielding effect.

Alternatively, the semiconductor chip 4 in the present embodiment may beshielded by two connection shield sheets 23 in the same manner as in thethird embodiment. Conversely, the semiconductor chip 4 in the thirdembodiment may be shielded by four connection shield sheets 23 in thesame manner as in the present embodiment.

Fifth Embodiment

FIGS. 22A and 22B are a cross-sectional view and a top view illustratinga structure of a semiconductor device of a fifth embodiment. Forexample, the method of the present embodiment is applied to a case wherea semiconductor chip need be protected from magnetic noise caused by astatic magnetic field.

The semiconductor device of the present embodiment has a structure inwhich the semiconductor device of the first embodiment further includesthe lower shield sheet 21, the upper shield sheet 22 and the connectionshield sheets 23 of the third embodiment. It is noted that the uppershield sheet 22 of the present embodiment is mounted on the shield upperplate 8 via a DA material 2, instead of being mounted on thesemiconductor chip 4 via the embedding DA material 7 (see FIG. 16A). Theshield lower plate 3, the shield upper plate 8, the lower shield sheet21 and the upper shield sheet 22 are examples of the first, second,third and fourth shield members, respectively.

The semiconductor device of the present embodiment is manufactured, forexample, by performing the step illustrated in FIGS. 12A and 12B,subsequently performing the steps illustrated in FIGS. 1A to 4B, andthen performing the steps illustrated in FIGS. 14A to 16B. It is notedthat, at the step illustrated in FIG. 1A to 1B, the shield lower plate 3is mounted on the lower shield sheet 21 via the DA material 2.Furthermore, at the step illustrated in FIGS. 14A and 14B, the uppershield sheet 22 is mounted on the shield upper plate 8 via the DAmaterial 2.

From another point of view, the semiconductor device of the presentembodiment has a structure in which the semiconductor device of thethird embodiment further includes the shield lower plate 3, theshielding wire 6 and the shield upper plate 8 of the first embodiment.In this situation, the lower shield sheet 21, the upper shield sheet 22,the shield lower plate 3 and the shield upper plate 8 are examples ofthe first, second, third and fourth shield members, respectively. It ispossible to manufacture the semiconductor device in this example also,by performing the step illustrated in FIGS. 12A and 12B, subsequentlyperforming the steps illustrated in FIGS. 1A to 4B, and then performingthe steps illustrated in FIGS. 14A to 16B.

The present embodiment makes it possible to realize a shield structureby using the shield lower plate 3, the shielding wire 6, the shieldupper plate 8, the lower shield sheet 21, the upper shield sheet 22 andthe connection shield sheets 23, which can protect the semiconductorchip 4 from magnetic noise by using the shield structure having a highshielding effect.

Sixth Embodiment

FIGS. 23A and 23B are a cross-sectional view and a top view illustratinga structure of a semiconductor device of a sixth embodiment. Forexample, the method of the present embodiment is applied to a case wherea semiconductor chip generates an electromagnetic wave or may beinfluenced by an electromagnetic wave.

The semiconductor device of the present embodiment has a structure inwhich the semiconductor device of the second embodiment further includesthe lower shield sheet 21, the upper shield sheet 22 and the connectionshield sheets 23 of the fourth embodiment. It is noted that the uppershield sheet 22 of the present embodiment is mounted on the shield upperplate 8 via a DA material 2, instead of being mounted on thesemiconductor chip 4 via the embedding DA material 7 (see FIG. 19A). Theground layer 1 a, the shield upper plate 8, the lower shield sheet 21and the upper shield sheet 22 are examples of the first, second, thirdand fourth shield members, respectively.

The semiconductor device of the present embodiment is manufactured, forexample, by performing the step illustrated in FIGS. 7A and 7B,subsequently performing the step illustrated in FIGS. 17A and 17B andperforming by the steps illustrated in FIGS. 8A to 9B, and thenperforming the steps illustrated in FIGS. 19A to 21B. It is noted that,at the step illustrated in FIGS. 17A and 17B, the lower shield sheet 21is formed on the substrate 1 including the ground layer 1 a via a DAmaterial 2, and the openings 31 are not needed. Furthermore, at thesteps illustrated in FIGS. 8A and 8B, the semiconductor chip 4 ismounted on the lower shield sheet 21 via a DA material 2. In addition,at the step illustrated in FIGS. 19A and 19B, the upper shield sheet 22is mounted on the shield upper plate 8 via a DA material 2.

From another point of view, the semiconductor device of the presentembodiment has a structure in which the semiconductor device of thefourth embodiment further includes the ground layer 1 a, the pads 1 band 1 c, the shielding wire 6 and the shield upper plate 8 of the secondembodiment. In that situation, the lower shield sheet 21, the uppershield sheet 22, the ground layer 1 a and the shield upper plate 8 areexamples of the first, second, third and fourth shield members,respectively. The semiconductor device in this example is alsomanufactured by performing the step illustrated in FIGS. 7A and 7B,subsequently performing the step illustrated in FIGS. 17A and 17B andperforming the steps illustrated in FIGS. 8A to 9B, and then performingthe steps illustrated in FIGS. 19A to 21B.

The present embodiment makes it possible to realize a shield structureby using the ground layer 1 a, the shielding wire 6, the shield upperplate 8, the lower shield sheet 21, the upper shield sheet 22 and theconnection shield sheets 23, which can prevent electromagnetic noisefrom being released from the semiconductor chip 4 to the outside andprevent electromagnetic noise from entering the semiconductor chip 4from the outside by using the shield structure having a high shieldingeffect.

Modifications of the fifth and sixth embodiments include a semiconductordevice having a structure obtained by combining the structures of thesemiconductor devices of the first embodiment and the fourth embodiment,and a semiconductor device having a structure obtained by combining thestructures of the semiconductor devices of the second embodiment and thethird embodiment. By using any of these modifications, it is possible torealize a semiconductor device capable of addressing both magnetic fieldnoise and electromagnetic noise.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel devices and methods describedherein may be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the devices andmethods described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the inventions.

The invention claimed is:
 1. A semiconductor device comprising: asubstrate; a first shield member provided on an upper face of thesubstrate; a semiconductor chip provided on the first shield member; afirst wire electrically connected to the semiconductor chip and thesubstrate; a second shield member provided above the semiconductor chipand electrically insulated from the first wire; and a connecting memberelectrically or magnetically connected to the first shield member andthe second shield member through a pressure bonding process, and havinga sheet-like shape, the connecting member being bonded to the first andsecond shield members without any adhesive.
 2. The device of claim 1,wherein each of the first shield member, the second shield member, andthe connecting member is a resin film containing a magnetic material ora conductive material.
 3. The device of claim 1, further comprising, asthe connecting member, first and second connecting members provided soas to sandwich the semiconductor chip and the second shield member. 4.The device of claim 1, wherein: the semiconductor chip comprises a firstlateral face, a second lateral face positioned opposite the firstlateral face, a third lateral face positioned between the first lateralface and the second lateral face, and a fourth lateral face positionedopposite the third lateral face, and the first wire is electricallyconnected to the semiconductor chip and the substrate on a side of thefirst or second lateral face, and the connecting member is electricallyor magnetically connected to the first and the second shield members ona side of the third or fourth lateral face.
 5. The device of claim 1,wherein: the semiconductor chip comprises a first lateral face, a secondlateral face positioned opposite the first lateral face, a third lateralface positioned between the first lateral face and the second lateralface, and a fourth lateral face positioned opposite the third lateralface, and the first wire is electrically connected to the semiconductorchip and the substrate on a side of the third or fourth lateral face,and the connecting member is electrically or magnetically connected tothe first and the second shield members on a side of the third or fourthlateral face.
 6. The device of claim 1, further comprising: a thirdshield member provided below the semiconductor chip; a second wireelectrically or magnetically connected to the third shield member; and afourth shield member provided between the semiconductor chip and thesecond shield member, electrically insulated from the first wire, andelectrically or magnetically connected to the second wire.
 7. The deviceof claim 1, wherein the second shield member is provided above thesemiconductor chip via a film, and a portion of the first wire isprovided in the film.
 8. A method of manufacturing a semiconductordevice, the method comprising: mounting a semiconductor chip on a firstshield member provided on an upper face of a substrate; electricallyconnecting a first wire to the semiconductor chip and the substrate;mounting a second shield member above the semiconductor chip so as to beelectrically insulated from the first wire; and electrically ormagnetically connecting the first shield member to the second shieldmember by using a connecting member having a sheet-like shape, whereinthe connecting member is electrically or magnetically connected to thefirst and second shield members through a pressure bonding process. 9.The method of claim 8, further comprising providing, as the connectingmember, first and second connecting members so as to sandwich thesemiconductor chip and the second shield member.
 10. The method of claim8, wherein the second shield member is mounted above the semiconductorchip via a film formed on the second shield member.
 11. The method ofclaim 10, wherein the second shield member is mounted above thesemiconductor chip such that a portion of the first wire is embedded bythe film.
 12. The method of claim 8, further comprising: electrically ormagnetically connecting a second wire to a third shield memberpositioned below the semiconductor chip; and mounting a fourth shieldmember above the semiconductor chip so as to be electrically insulatedfrom the first wire and to be electrically or magnetically connected tothe second wire, wherein the second shield member is mounted on thefourth shield member.
 13. The method of claim 12, wherein the fourthshield member is mounted above the semiconductor chip via a film formedon the fourth shield member.
 14. The method of claim 13, wherein thefourth shield member is mounted above the semiconductor chip such thatportions of the first and the second wires are embedded by the film. 15.The method of claim 8, wherein the connecting member is formed on anupper face of the first shield member and an upper face of the secondshield member.
 16. A semiconductor device comprising: a substrate; afirst shield member provided on an upper face of the substrate; asemiconductor chip provided on the first shield member; a first wireelectrically connected to the semiconductor chip and the substrate; asecond shield member provided above the semiconductor chip andelectrically insulated from the first wire; and a connecting memberelectrically or magnetically connected to the first shield member andthe second shield member and having a sheet-like shape, wherein theconnecting member is provided on an upper face of the first shieldmember and an upper face of the second shield member.
 17. Asemiconductor device comprising: a substrate; a first shield memberprovided on an upper face of the substrate; a semiconductor chipprovided on the first shield member; a first wire electrically connectedto the semiconductor chip and the substrate; a second shield memberprovided above the semiconductor chip and electrically insulated fromthe first wire; and a connecting member electrically or magneticallyconnected to the first shield member and the second shield member andhaving a sheet-like shape, wherein the semiconductor device comprises,as the connecting member, first and second connecting members providedso as to sandwich the semiconductor chip and the second shield member.